WSD60N10GDN56 N-chaneli 100V 60A DFN5X6-8 WINSOK MOSFET

bidhaa

WSD60N10GDN56 N-chaneli 100V 60A DFN5X6-8 WINSOK MOSFET

maelezo mafupi:

Nambari ya Sehemu:WSD60N10GDN56

BVDSS:100V

ID:60A

RDSON:8.5mΩ

Kituo:N-chaneli

Kifurushi:DFN5X6-8


Maelezo ya Bidhaa

Maombi

Lebo za Bidhaa

Muhtasari wa bidhaa za WINSOK MOSFET

Voltage ya WSD60N10GDN56 MOSFET ni 100V, sasa ni 60A, upinzani ni 8.5mΩ, kituo ni N-channel, na mfuko ni DFN5X6-8.

Maeneo ya maombi ya WINSOK MOSFET

E-sigara MOSFET, MOSFET ya kuchaji bila waya, motors MOSFET, drones MOSFET, huduma ya matibabu MOSFET, chaja za gari MOSFET, vidhibiti MOSFET, bidhaa za dijitali MOSFET, vifaa vidogo vya nyumbani vya MOSFET, vifaa vya elektroniki vya watumiaji MOSFET.

Sehemu za maombi ya MOSFETWINSOK MOSFET inalingana na nambari zingine za nyenzo za chapa

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINSFETN3BOSSCANPHINEON,IR MOSFET61,IR MOSFET619. 8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semicondukta MOSFET PDC92X.

Vigezo vya MOSFET

Alama

Kigezo

Ukadiriaji

Vitengo

VDS

Mfereji-Chanzo Voltage

100

V

VGS

Lango-Chanzo Voltage

±20

V

ID@TC=25℃

Kuendelea Kukimbia Sasa

60

A

IDP

Pulsed Drain Sasa

210

A

EAS

Nishati ya Banguko, Mpigo mmoja

100

mJ

PD@TC=25℃

Upotezaji wa Nguvu Jumla

125

W

TSTG

Kiwango cha Joto la Uhifadhi

-55 hadi 150

TJ 

Safu ya Joto ya Makutano ya Uendeshaji

-55 hadi 150

 

Alama

Kigezo

Masharti

Dak.

Chapa.

Max.

Kitengo

BVDSS 

Voltage ya Uchanganuzi wa Chanzo cha Mfereji VGS=0V , mimiD=250uA

100

---

---

V

  Chanzo Kinachokinza kwenye Mifereji ya Maji Taka VGS=10V,ID=10A.

---

8.5

10. 0

RDS(IMEWASHWA)

VGS=4.5V,ID=10A.

---

9.5

12. 0

VGS(th)

Voltage ya Kizingiti cha Lango VGS=VDS, mimiD=250uA

1.0

---

2.5

V

IDSS

Uvujaji wa Chanzo cha Maji taka kwa Sasa VDS=80V , VGS=0V , TJ=25℃

---

---

1

uA

IGSS

Uvujaji wa Lango-Chanzo Sasa VGS=±20V , VDS=0V

---

---

±100

nA

Qg 

Jumla ya Malipo ya Lango (10V) VDS=50V , VGS=10V , ID=25A

---

49.9

---

nC

Qgs 

Malipo ya lango-Chanzo

---

6.5

---

Qgd 

Malipo ya lango-Drein

---

12.4

---

Td(imewashwa)

Wakati wa Kuchelewa kwa Washa VDD=50V , VGS=10V ,RG=2.2Ω, ID=25A

---

20.6

---

ns

Tr 

Muda wa Kupanda

---

5

---

Td(zimezimwa)

Muda wa Kucheleweshwa kwa Kuzima

---

51.8

---

Tf 

Wakati wa Kuanguka

---

9

---

Cni 

Uwezo wa Kuingiza VDS=50V , VGS=0V , f=1MHz

---

2604

---

pF

Coss

Uwezo wa Pato

---

362

---

Crss 

Reverse Transfer Capacitance

---

6.5

---

IS 

Chanzo Kinachoendelea Sasa VG=VD=0V , Lazimisha Sasa

---

---

60

A

Mtoa Huduma za Intaneti

Chanzo cha Pulsed Sasa

---

---

210

A

VSD

Diode Forward Voltage VGS=0V , mimiS=12A , TJ=25℃

---

---

1.3

V

trr 

Reverse Recovery Time IF=12A,dI/dt=100A/µs,TJ=25℃

---

60.4

---

nS

Qrr 

Reverse Recovery Charge

---

106.1

---

nC


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